Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367442
Reference24 articles.
1. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
2. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
3. New MBE buffer used to eliminate backgating in GaAs MESFETs
4. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
5. Native point defects in low‐temperature‐grown GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and properties of new III–V diluted magnetic semiconductor Ga1−xCrxAs;Journal of Crystal Growth;2002-04
2. Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers;Crystallography Reports;2002-01
3. Native point defects in non-stoichiometric GaAs doped with beryllium;Physica B: Condensed Matter;2001-12
4. Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations;Journal of Electronic Materials;1999-07
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