Early manifestation of localization effects in diluted Ga(AsN)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586787
Reference23 articles.
1. Current status of research and development of III N V semiconductor alloys
2. Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs
3. Effect of low-energy nitrogen molecular-ion impingement during the epitaxial growth of GaAs on the photoluminescence spectra
4. From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
5. Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
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