An amorphous silicon/silicon‐carbide double barrier structure with 2.66 peak to valley current ratio negative resistance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351798
Reference8 articles.
1. Resonant tunneling in semiconductor double barriers
2. Resonant tunneling through amorphous silicon–silicon nitride double-barrier structures
3. Negative resistance in a-SiCx:H double barrier devices — frequency dependence
4. Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications
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1. Resonant Tunneling through Monolayer Si Colloidal Quantum Dots and Ge Nanocrystals;Advanced Functional Materials;2017-03-31
2. Design and fabrication of a TiO 2 /nano-silicon composite visible light photocatalyst;Applied Surface Science;2006-11
3. A Novel Amorphous Silicon Double Barrier Homojunction Device with Negative Resistance;Japanese Journal of Applied Physics;1995-03-01
4. Preparation and analysis of the negative resistance characteristic in an amorphous silicon and silicon–carbide single‐barrier device;Applied Physics Letters;1994-11-28
5. Observation of very high peak-to-valley current ratio (≥9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer;IEEE Journal of Quantum Electronics;1994
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