InyGa1−yAs/InyAl1−yAs resonant tunneling diodes on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105562
Reference17 articles.
1. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
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3. Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures
4. Inelastic tunneling in AlAs‐GaAs‐AlAs heterostructures
5. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=
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