Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94328
Reference9 articles.
1. MOVPE Growth of Ga1-xAlxAs-GaAs Quantum Well Heterostructures
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4. Depth profiling and interface analysis using spectroscopic ellipsometry
5. Spectroscopie des composés Ga1-xAlxAs par modulation de longueur d'onde
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1. Optical Physics of Materials;Handbook of Ellipsometry;2005
2. Ellipsometry;digital Encyclopedia of Applied Physics;2004-07-15
3. In situ ellipsometric control of heterostructures grown by chemical beam epitaxy;Thin Solid Films;1994-08
4. Sensitivity of variable angle of incidence spectroscopic ellipsometry to compositional profiles of graded AlxGa1-xAs-GaAs structures;Applied Surface Science;1994-03
5. New developments in spectroellipsometry: the challenge of surfaces;Thin Solid Films;1993-10
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