Ohmic contact to p-type GaAs using Cu3Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125505
Reference17 articles.
1. Recent developments in ohmic contacts for III–V compound semiconductors
2. Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization
3. Comprehensive study of AuMnp‐type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors
4. Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
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1. Nanoscale electrical properties of epitaxial Cu3Ge film;Scientific Reports;2016-07-01
2. Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects;Journal of Alloys and Compounds;2015-08
3. Formation of Cu1-xGex Nanoplatelets Using LPCVD of Ge2Me6 or Ge2Me6/Et4Pb Mixture;Nano;2015-06
4. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21
5. Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties;Intermetallics;2013-03
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