The microstructure of programmedn+pn+polycrystalline silicon antifuses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332438
Reference6 articles.
1. A fault-tolerant 256K RAM fabricated with molybdenum-polysilicon technology
2. A novel MOS PROM using a highly resistive poly-Si resistor
3. Second-breakdown phenomena in avalanching silicon-on-sapphire diodes
4. Filamentation in silicon‐on‐sapphire homogeneous thin films
5. High‐speed droplet migration in silicon
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1. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device;Journal of Semiconductors;2017-12
2. Nanometer-scale switches using copper sulfide;Applied Physics Letters;2003-05-05
3. A Thermal Model for the Initiation of Programming in Metal‐to‐Metal Amorphous‐Silicon Antifuses;Journal of The Electrochemical Society;1999-04-01
4. Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses;Journal of Applied Physics;1998-11
5. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998
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