The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect

Author:

Bao Zongchi1ORCID,Liu Bin1ORCID,Liu Xianwen1,Zhang Shuo1ORCID,Weng Le1,Sun Haoran1,Zhang Xi1,Yao Qi12,Yuan Guangcai2,Guo Jian2,Ning Ce2,Shi Dawei2,Wang Feng1ORCID,Yu Zhinong1ORCID

Affiliation:

1. School of Optics and Photonics, Beijing Institute of Technology 1 , Beijing 100081, China

2. Beijing BOE Optoelectronics Technology Co., Ltd 2 , Beijing 100176, China

Abstract

Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell–Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.

Funder

National Key Research and Development Program of China

Publisher

AIP Publishing

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