High dopant and carrier concentration effects in gallium aluminum arsenide: Densities of states and effective intrinsic carrier concentrations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367127
Reference15 articles.
1. Majority and minority electron and hole mobilities in heavily doped gallium aluminum arsenide
2. The modification of electron energy levels by impurity atoms
3. Band gap narrowing due to many-body effects in silicon and gallium arsenide
4. Impurity bands and band tailing inn‐type GaAs
5. Deep donor levels (DXcenters) in III‐V semiconductors
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