Depth resolution degradation of sputter‐profiled InP/InxGa1−xAsyP1−yinterfaces caused by cone formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91332
Reference8 articles.
1. Auger profile study of the influence of lattice mismatch on the LPE InGaAsP‐InP heterojunction interface
2. The depth resolution of sputter profiling
3. Effects of ion sputtering on semiconductor surfaces
4. Influence of atomic mixing and preferential sputtering on depth profiles and interfaces
5. Sputtering in the surface analysis of solids: A discussion of some problems
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1. Surface anisotropy of CrxN1−x films prepared on an inner wall by magnetic sputtering;Applied Surface Science;2007-07
2. Ion‐induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-05
3. Morphologies of Solid Surfaces Produced far from Equilibrium;MRS Proceedings;1991
4. A new technique for fabrication of OEICs-the etched back planar process-and its application to the fabrication of planar embedded InP-InGaAs p-i-n photodiodes;IEEE Photonics Technology Letters;1990-10
5. Growth and Erosion of Thin Solid Films;Science;1990-07-20
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