Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference12 articles.
1. Characterization of heterojunction devices constructed by amorphous diamondlike films on silicon
2. Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes
3. Photoresponse characteristics ofn‐type tetrahedral amorphous carbon/p‐type Si heterojunction diodes
4. Nitrogenated tetrahedral amorphous carbon films prepared by ion-beam-assisted filtered cathodic vacuum arc technique for solar cells application
5. A phosphorous doped (n-type) carbon/boron doped (p-type) silicon photovoltaic solar cell from a natural source
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1. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects;Advanced Materials;2015-09-30
2. Amorphous carbon–silicon heterojunctions by pulsed Nd:YAG laser deposition;Thin Solid Films;2009-07
3. Investigation of diamond-like carbon/silicon heterojunctions deposited by pulsed Nd:YAG laser;Vacuum;2008-08
4. High frequency C–V study of devices based on diamond-like carbon films;Solid-State Electronics;2004-02
5. High-power photoconductive semiconductor switches treated with amorphic diamond coatings;IEEE Transactions on Plasma Science;2002-10
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