Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit-Reference-Cited by-同舟云学术

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Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

Published:2018-05 Issue:5 Volume:8 Page:055026
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yang Jiancheng¹,Ren F.¹^ORCID,Tadjer Marko²,Pearton S. J.³^ORCID,Kuramata A.⁴

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA

2. Naval Research Laboratory, Washington, DC 20375, USA

3. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA

4. Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan

Funder

Defense Threat Reduction Agency

New Energy and Industrial Technology Development Organization

Office of Naval Research Global

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034444

Reference32 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. Group-III Sesquioxides: Growth, Physical Properties and Devices

3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

4. A review of Ga2O3materials, processing, and devices

5. State-of-the-art technologies of gallium oxide power devices

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1. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18

2. β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV;Transactions on Electrical and Electronic Materials;2024-04-03

3. NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current;Crystals;2023-11-23

4. The Impact of Anode p+ Islands Layout on the Performance of NiO_x/β-Ga₂O₃ Hetero-Junction Barrier Schottky Diodes;IEEE Transactions on Electron Devices;2023-11

5. Investigation of Normally-Off β-Ga2O3 Power MOSFET Using Ferroelectric Gate;Lecture Notes in Electrical Engineering;2023-09-03

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