Intervalence band absorption loss coefficients of the active layer for InP-based long wavelength laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372144
Reference17 articles.
1. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption
2. The temperature dependence of the threshold current of GaInAsP/InP DH lasers
3. Absorption loss coefficient of the active layer for 1.48-μm bulk and MQW lasers
4. A condition of single longitudinal mode operation in injection lasers with index-guiding structure
5. Analysis of gain suppression in undoped injection lasers
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2. Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors;IEEE Journal of Quantum Electronics;2017-06
3. The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss;IEEJ Transactions on Electronics, Information and Systems;2011
4. Temperature Dependence of Threshold Currents of 1.55 µm p-Substrate Buried Crescent Laser Diodes;Japanese Journal of Applied Physics;2004-09-09
5. Intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes;Journal of Applied Physics;2002-12
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