Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements-Reference-Cited by-同舟云学术

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

Published:1987-07-20 Issue:3 Volume:51 Page:183-185
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bresse J. F.,Papadopoulo A. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98916

Reference11 articles.

1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs

2. Summary Abstract: Effects of high levels of Be in GaAs by MBE

3. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy

4. Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

5. Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

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