Toward CMOS like devices from two-dimensional channel materials
Author:
Affiliation:
1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Funder
Semiconductor Research Corporation
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5115147
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1. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm
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