Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1150372
Reference6 articles.
1. Low temperature growth of A1n and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system
2. Material properties of a ZrNx film on silicon prepared by ion‐assisted deposition method
3. Field emission characteristics of transition-metal nitrides
4. Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices
5. Axial magnetic field extraction‐type microwave ion source with a permanent magnet
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1. In situ formation of NbOx@NbN microcomposites: seeking potential in photocatalytic and Li-ion battery applications;New Journal of Chemistry;2018
2. Emittance of compact microwave ion source for low energy application;Review of Scientific Instruments;2014-02
3. Nitridation of Niobium Pentoxide Films in Ammonia by Rapid Thermal Processing;Zeitschrift für anorganische und allgemeine Chemie;2009-09
4. Nitridation of niobium oxide films by rapid thermal processing;Analytical and Bioanalytical Chemistry;2008-02-06
5. The growth and diffusion barrier properties of atomic layer deposited NbNx thin films;Thin Solid Films;2005-11
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