Robust, scalable self-aligned platinum silicide process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2194313
Reference17 articles.
1. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 491 and 492.
3. Silicon field‐effect transistor based on quantum tunneling
4. Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
5. High-Speed Schottky-Barrier pMOSFET With<tex>$f_T = 280 hbox GHz$</tex>
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