Tamm states and donors at InAs/AlSb interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358910
Reference22 articles.
1. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
2. Electron accumulation in AlGaSb/InAs/AlGaSb quantum well system
3. Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells
4. Remoten‐type modulation doping of InAs quantum wells by ‘‘deep acceptors’’ in AlSb
5. Impurities in type-II-staggered InAs/AℓSb superlattices
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