Electroluminescence from Ge‐Doped GaP p—n Junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1656394
Reference10 articles.
1. Pair Spectra Involving Donor and/or Acceptor Germanium in GaP
2. Solubility and Electrical Behavior of Group IV Impurities in Solution Grown Gallium Phosphide
3. Radiative Recombination between Deep‐Donor‐Acceptor Pairs in GaP
4. Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP
5. Apparatus for Light Efficiency Measurement
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strahlende Rekombination und optische Eigenschaften von GaP;Fortschritte der Physik;1975
2. The gallium-site donors germanium and silicon in gallium phosphide;Journal of Luminescence;1974-12
3. Luminescence of gallium phosphide doped with germanium;Soviet Physics Journal;1974-03
4. Paramagnetic Resonance and Hall Coefficients in Fe‐Doped n‐Type GaP;Journal of Applied Physics;1972-05
5. Autodoping Effects of Ge in Vapor‐Grown GaP Layers on Ge Substrates;Journal of Applied Physics;1972-04
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