Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy

Author:

Zhang G.,Jayavel P.,Koyama T.,Kumagawa M.,Hayakawa Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Evolution of Atomistic Topology at H2O/GaSb(100) Interface under Ambient Conditions and GaSb Surface Passivation;The Journal of Physical Chemistry C;2019-08-06

2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

3. Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth;AIP Advances;2013-09

4. Liquid Phase Epitaxy for Light Emitting Diodes;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

5. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

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