X‐ray topography of growth striations in Czochralski‐grown Si wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98210
Reference6 articles.
1. Interaction of dislocations with impurities in silicon crystals studied byin situX-ray topography
2. Infrared Absorption and Oxygen Content in Silicon and Germanium
3. Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal Topography
4. Determination of the Burgers vector of a dislocation from equal-thickness fringes observed with a plane wave of X-rays
5. Mechanism of the Formation of Donor States in Heat-Treated Silicon
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1. Peculiarities of the diffraction contrast in plane-wave X-ray topographs of weakly deformed crystals in the bragg geometry;Crystallography Reports;2011-09
2. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations;Physical Review B;2000-10-15
3. Plane‐Wave X‐Ray Topography Using Imaging Plates and Its Application to Characterization of Lattice Distortion in As‐Grown Silicon;Journal of The Electrochemical Society;1997-11-01
4. Chapter 3 Characterization Techniques for Oxygen in Silicon;Semiconductors and Semimetals;1994
5. Oxygen precipitation in silicon during CMOS processing: an FTIR microspectroscopic, X-ray topographic and TEM study of spatial variation in defect formation;Semiconductor Science and Technology;1989-09-01
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