Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Funder
Precursory Research for Embryonic Science and Technology
Thermal and Electric Energy Technology Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006958
Reference41 articles.
1. Thermoelectric materials and applications for energy harvesting power generation
2. Thermal and Electrical Properties of Heavily Doped Ge‐Si Alloys up to 1300°K
3. A model for the high‐temperature transport properties of heavily dopedn‐type silicon‐germanium alloys
4. B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor
5. Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications
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