High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels-Reference-Cited by-同舟云学术

High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels

Published:2016-10-31 Issue:18 Volume:109 Page:182105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Deng Sunbin¹,Chen Rongsheng¹²,Li Guijun¹,Xia Zhihe¹,Zhang Meng¹,Zhou Wei¹,Wong Man¹,Kwok Hoi-Sing¹

Affiliation:

1. State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong

2. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, People's Republic of China

Funder

Research Grants Council, University Grants Committee (RGC, UGC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966900

Reference15 articles.

1. Amorphous Oxide Semiconductor TFTs for Displays and Imaging

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Modeling and simulation of polycrystalline ZnO thin-film transistors

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