Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing-Reference-Cited by-同舟云学术

Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing

Author:

De Silva Milantha¹,Kawasaki Teruhisa²,Miyazaki Takamichi³,Koganezawa Tomoyuki⁴,Yasuno Satoshi⁴,Kuroki Shin-Ichiro¹^ORCID

Affiliation:

1. Research Institute for Nanodevices and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan

2. Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka-shi, Kanagawa 237-8555, Japan

3. School of Engineering, Tohoku University, 6-6-11 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

4. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

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