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Terahertz generation by GaAs nanowires

Published:2013-08-12 Issue:7 Volume:103 Page:072108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Trukhin V. N.,Buyskikh A. S.,Kaliteevskaya N. A.,Bourauleuv A. D.,Samoilov L. L.,Samsonenko Yu. B.,Cirlin G. E.,Kaliteevski M. A.,Gallant A. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4818719

Reference17 articles.

1. Optical rectification at semiconductor surfaces

2. Optically induced electromagnetic radiation from semiconductor surfaces

3. Terahertz pulses from semiconductor‐air interfaces

4. Enhanced terahertz emission from porous InP (111) membranes

5. Terahertz emission from vertically aligned InN nanorod arrays

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1. Semiconductor THz Emitting Nanometasurface (STEN);Advanced Optical Materials;2023-12-25

2. Second order nonlinear optical properties of GaAs quantum dots in terahertz region;The European Physical Journal B;2023-10

3. The application of one-dimensional nanostructures in terahertz frequency devices;Applied Physics Reviews;2021-12

4. Silicon Nanowires as a Potential Material for Terahertz Applications;Lecture Notes in Electrical Engineering;2021

5. Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy;Light: Science & Applications;2020-11-19

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