Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates-Reference-Cited by-同舟云学术

Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates

Published:2006-05-08 Issue:19 Volume:88 Page:192111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu J.,Kwong D. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2203210

Reference11 articles.

1. W. Arden, P. Cogez, M. Graef, and G. Goltz, The International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Francisco, 2004), Vol. 8, p. 6.

2. Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

3. Dual work function metal gates using full nickel silicidation of doped poly-Si

4. Investigation of NiSi and TiSi as CMOS gate materials

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