Identification of hole transitions at the neutral interstitial manganese center in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101975
Reference11 articles.
1. Transition metals in silicon
2. Electronic Structure of 3d Transition-Atom Impurities in Semiconductors
3. High-resolution spectroscopy of silver-doped silicon
4. Transition Metal Excited States in Silicon
5. Line spectrum of the interstitial iron donor in silicon
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1. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009
2. Influence of pressure annealing on electrical properties of Mn implanted silicon;Vacuum;2007-06
3. Recombination activity of manganese in p- and n-type crystalline silicon;Semiconductor Science and Technology;2007-01-09
4. The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon;Semiconductor Science and Technology;1996-05-01
5. Trigonal manganese cluster in silicon: An electron-paramagnetic-resonance study;Physical Review B;1994-04-15
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