Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364105
Reference38 articles.
1. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
2. The role of microstructure in the electrical properties of GaAs grown at low temperature
3. First direct observation of EL2-like defect levels in annealed LT-GaAS
4. Picosecond GaAs‐based photoconductive optoelectronic detectors
5. Low Temperature GaAs: Electrical and Optical Properties
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