Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma
Author:
Affiliation:
1. Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5025021
Reference28 articles.
1. Crystal Structure of Barium Disilicide at High Pressures
2. Electrical resistivity of metastable phases of BaSi2 synthesized under high pressure and high temperature
3. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
4. Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties
5. Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy
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