The behavior of the I‐V‐T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2777881
Reference48 articles.
1. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
2. Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
3. Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
4. Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements
5. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
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