Electron Hall mobility in GaxIn1−xAsyP1−ycalculated with two‐longitudinal‐optical‐phonon model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92824
Reference15 articles.
1. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
2. Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−ylayers
3. Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
4. Cyclotron resonance and the magnetophonon effect in GaxIn1−xAsyP1−y
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure;Journal of Physics C: Solid State Physics;1987-01-30
2. Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells;Journal of Electronic Materials;1986-01
3. LPE growth of InGaAs/InP and AiGaInAs/InP structures;Progress in Crystal Growth and Characterization;1986-01
4. The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits;GaAs Microelectronics;1985
5. Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP;Semiconductors and Semimetals;1985
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