Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093806
Reference16 articles.
1. Quantum-confinement effect in individual Ge1−xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy
2. Epitaxial growth of ultrahigh density Ge1−xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films
3. Electrostatic sample-tip interactions in the scanning tunneling microscope
4. Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements
5. Nanometer-scale measurements of photoabsorption spectra of individual defects in semiconductors
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