Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1496138
Reference10 articles.
1. Study of thermally oxidized yttrium films on silicon
2. Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications
3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. High temperature stability in lanthanum and zirconia-based gate dielectrics
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