Modification of drain current on metal–oxide–semiconductor field-effect transistor by magnetic field induced by remanent magnetization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1812382
Reference13 articles.
1. films grown by laser ablation on Si(100) and GaAs(100) substrates with and without MgO buffer layers
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2. Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application;Sensors;2016-08-30
3. Stimuli-responsive fluorescence based on the solid-state bis[2-(2-benzothiazoly)phenolato]zinc(ii) complex and its fiber thin film;RSC Adv.;2015
4. Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide;Journal of the Magnetics Society of Japan;2006
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