Schottky diode with excellent performance for large integration density of crossbar resistive memory-Reference-Cited by-同舟云学术

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Schottky diode with excellent performance for large integration density of crossbar resistive memory

Published:2012-05-21 Issue:21 Volume:100 Page:213508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hwan Kim Gun,Ho Lee Jong,Hwan Han Jeong,Ji Song Seul,Yeong Seok Jun,Ho Yoon Jung,Jean Yoon Kyung,Hwan Lee Min,Joo Park Tae,Seong Hwang Cheol

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4722784

Reference15 articles.

1. Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

2. A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

3. High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

4. Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

5. A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

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