Implantation species dependence of transient enhanced diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366708
Reference27 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
3. Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si
4. Diffusion of boron in silicon during post‐implantation annealing
5. Diffusion Modeling of Ion Implanted Boron in Si during RTA: Correlation of Extended Defect Formation and Annealing with the Enhanced Diffusion of Boron
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2. Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures;Japanese Journal of Applied Physics;2014-06-24
3. Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials;Journal of Applied Physics;2012-04
4. Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices;Journal of Applied Physics;2009-01
5. Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing;The European Physical Journal Applied Physics;2004-07
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