Schottky barrier height of ferromagnet/Si(001) junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337562
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1. Spin Resonance of Localized and Delocalized Electrons in Phosphorus-Doped Silicon between 20 and 30 °K
2. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
3. Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics
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5. A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel
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