Quantitative analysis of anisotropic magnetoresistance in Co2MnZ and Co2FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds-Reference-Cited by-同舟云学术

Quantitative analysis of anisotropic magnetoresistance in Co2MnZ and Co2FeZ epitaxial thin films: A facile way to investigate spin-polarization in half-metallic Heusler compounds

Published:2014-04-28 Issue:17 Volume:104 Page:172407
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sakuraba Y.,Kokado S.,Hirayama Y.,Furubayashi T.,Sukegawa H.,Li S.,Takahashi Y. K.,Hono K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4874851

Reference22 articles.

1. Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions

2. Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

3. Large Interface Spin-Asymmetry and Magnetoresistance in Fully Epitaxial Co2MnSi/Ag/Co2MnSi Current-Perpendicular-to-Plane Magnetoresistive Devices

4. Mechanism of large magnetoresistance inCo2MnSi/Ag/Co2MnSidevices with current perpendicular to the plane

5. Large Magnetoresistance Effect in Epitaxial Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si/Ag/Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si Devices

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