Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1−xMnxAs films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3486210
Reference18 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Magnetoelectronics
3. Electric-field control of ferromagnetism
4. Ferromagnetic semiconductor GaMnAs
5. Precise Investigation of Domain Pinning Energy in GaMnAs Using Planar Hall Effect and Magnetoresistance Measurements
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1. Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements;Scientific Reports;2021-05-13
2. Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance;Scientific Reports;2018-02-02
3. Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor;Applied Physics Letters;2017-12-18
4. Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films;Semiconductor Science and Technology;2014-01-30
5. Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect;Journal of Applied Physics;2013-05-07
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