Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation-Reference-Cited by-同舟云学术

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

Published:2017-10 Issue:10 Volume:7 Page:105109
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Yao¹^ORCID,Zhang Jinfeng¹,Liu Guipeng²,Quan Rudai¹,Duan Xiaoling¹,Zhang Jincheng¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

2. Institute of Microelectronics, Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu 730000, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985825

Reference24 articles.

1. Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

2. Lattice and energy band engineering in AlInGaN/GaN heterostructures

3. Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

4. Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

5. Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

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1. Transport Properties of InGaN Channel-Based Heterostructures with GaN Interlayers;Journal of Electronic Materials;2023-11-28

2. Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate;Journal of Alloys and Compounds;2021-05

3. A Composition-Dependent Unified Analytical Model for Quaternary InAlGaN/GaN HEMTs for pH Sensing;Journal of Electronic Materials;2021-03-22

4. Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier;Solid-State Electronics;2019-02