Influence of layer thickness on passivation properties in SiOx/Al2O3 stacks
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany
Funder
German Ministry of Economic Affairs and Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5135391
Reference28 articles.
1. Electronic and chemical properties of the c-Si/Al2O3 interface
2. Silicon surface passivation by atomic layer deposited Al2O3
3. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD
4. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
5. Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density
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3. Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments;Advanced Materials Interfaces;2023-04-18
4. Effective passivation of TiO2/Si by interlayer SiOx controlled by scanning zone annealing for perovskite/Si tandem solar cell;Solar Energy;2022-04
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