Homogeneity qualification of GaAs substrates for large scale integration applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96699
Reference6 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Substrate effects on the threshold voltage of GaAs field‐effect transistors
3. Improvement of crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs by heat treatment
4. Characterization of thin active layer on semi-insulating GaAs by mapping of FET array performance
5. Uniformity evaluation of MESFET's for GaAs LSI fabrication
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X-ray topography of gallium arsenide used for MESFET fabrication;Semiconductor Science and Technology;1992-01-01
2. A GaAs MESFET with a partially depleted p layer for SRAM applications;IEEE Transactions on Electron Devices;1991
3. Raman microprobe analysis of GaAs wafers;Journal of Crystal Growth;1990-06
4. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS;Defect Control in Semiconductors;1990
5. Correlation between photoluminescence and electrical local fluctuations in liquid encapsulated Czochralski semi-insulating GaAs substrates;Materials Science and Engineering: B;1989-12
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