Hole antiresonances above quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369212
Reference21 articles.
1. Resonant carrier capture by semiconductor quantum wells
2. Inelastic and elastic mechanisms of electron capture to a quantum well
3. Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells
4. Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells
5. Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells
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1. Unitarity and symmetries of the multicomponent scattering matrix;Annals of Physics;2020-09
2. Valence-band effective-potential evolution for coupled holes;physica status solidi (b);2013-01-18
3. Generalized eigenvalue problem criteria for multiband-coupled systems: hole mixing phenomenon study;Physica Scripta;2011-10-31
4. Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells;Applied Physics Letters;2010-03-29
5. Off-resonant absorption in bound-to-continuump-typeGaAs/AlxGa1−xAsquantum wells: Overcoming absorption saturation with doping;Physical Review B;2003-08-08
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