Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1629373
Reference11 articles.
1. Deposition and Electrical Characterization of Very ThinSrTiO3Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
2. High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories
3. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
4. Ultrathin Ta2 O 5 Film Capacitor with Ru Bottom Electrode
5. Temperature dependence of the dielectric response of anodized Al–Al2O3–metal capacitors
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