Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA
2. Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, USA
Funder
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0023778
Reference28 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
2. Intrinsic electron mobility limits inβ-Ga2O3
3. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3
4. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
5. Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
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