One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864463
Reference23 articles.
1. New infrared detector on a silicon chip
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications
4. High-quality Ge epilayers on Si with low threading-dislocation densities
5. High quality heteroepitaxial Ge growth on (100) Si by MBE
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1. Metal-induced layer exchange of group IV materials;Journal of Physics D: Applied Physics;2020-06-29
2. Laser-induced aluminium-assisted crystallization of Ge-rich SixGe1-x epitaxy on Si;Thin Solid Films;2019-06
3. Epitaxial Growth of Ge on Si by Magnetron Sputtering;Epitaxy;2018-03-07
4. Effects of Al thickness on one-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering;Materials Letters;2017-12
5. In situ X-ray diffraction study on epitaxial growth of SixGe1−x on Si by aluminium-assisted crystallization;Journal of Alloys and Compounds;2017-02
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