Light induced phase change in Cu2−xZn1.3SnS4 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871705
Reference34 articles.
1. Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductors
2. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier
3. Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier
4. Investigating the Role of Grain Boundaries in CZTS and CZTSSe Thin Film Solar Cells with Scanning Probe Microscopy
5. Beyond 11% Efficiency: Characteristics of State-of-the-Art Cu2ZnSn(S,Se)4Solar Cells
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1. How different are CZTS grain boundaries?;Scripta Materialia;2021-03
2. Laser induced structural phase transitions in Cu3SbS4 thin films;Semiconductor Science and Technology;2019-09-24
3. Fabrication and Characterization of Cu2−XZn1.3SnS4 Kesterite Thin Films Synthesized by Solvent Based Process Method for Photovoltaic Solar Energy Applications;Lecture Notes in Mechanical Engineering;2018-12-21
4. Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering;Journal of Physics D: Applied Physics;2017-11-22
5. Structural, microstructural and optical properties of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 thin films prepared by thermal evaporation: effect of substrate temperature and annealing;Bulletin of Materials Science;2017-08-05
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