Improvement of the transport properties of a high-mobility electron system by intentional parallel conduction
Author:
Affiliation:
1. Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975055
Reference15 articles.
1. Measuring carrier density in parallel conduction layers of quantum Hall systems
2. ν=5/2fractional quantum Hall state in low-mobility electron systems: Different roles of disorder
3. Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million
4. Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation
5. The Two-Band Effect in Conduction
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