Positron charge sensing using a double-gated graphene field effect transistor-Reference-Cited by-同舟云学术

Positron charge sensing using a double-gated graphene field effect transistor

Published:2022-01-01 Issue:1 Volume:93 Page:015002
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Or Paz¹^ORCID,Devidas T. R.¹^ORCID,Taniguchi Takashi²,Watanabe Kenji³^ORCID,Sabo-Napadesky Iris⁴,May-Tal Beck Sharon⁵,Ron Guy¹^ORCID,Steinberg Hadar¹^ORCID

Affiliation:

1. The Racah Institute of Physics, The Center for Nanoscience and Nanotechnology, The Hebrew University, Jerusalem 91904, Israel

2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

3. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. Soreq NRC, Yavne 81800, Israel

5. Physics Department, NRCN, P.O. Box 9001, Beer-Sheva 84190, Israel

Funder

Israel Atomic Energy Commission

Israel Science Foundation

Japan Society for the Promotion of Science

Ministry of Science and Technology, Israel

Lady Davis Fellowship Trust, Hebrew University of Jerusalem

Publisher

AIP Publishing

Subject

Instrumentation

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0069481

Reference17 articles.

1. Recent developments on graphene and graphene oxide based solid state gas sensors

2. Selective Gas Sensing with a Single Pristine Graphene Transistor

3. Enhancing the response of NH3 graphene-sensors by using devices with different graphene-substrate distances

4. Detection of individual gas molecules adsorbed on graphene

5. Graphene nanoelectronic heterodyne sensor for rapid and sensitive vapour detection

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