Room temperature near-ultraviolet emission from In-rich InGaN∕GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Room temperature near-ultraviolet emission from In-rich InGaN∕GaN multiple quantum wells

Published:2005-05-09 Issue:19 Volume:86 Page:192105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kwon Soon-Yong,Baik Sung-Il,Kim Young-Woon,Kim Hee Jin,Ko Dong-Su,Yoon Euijoon,Yoon Jung-Won,Cheong Hyeonsik,Park Yoon-Soo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1923177

Reference14 articles.

1. The Blue Laser Diode

2. Unusual properties of the fundamental band gap of InN

3. Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h

4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

5. V-shaped inversion domains in InN grown on c-plane sapphire

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1. Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE);Journal of Alloys and Compounds;2022-11

2. Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes;IEEE Transactions on Nuclear Science;2020-07

3. Compositional and strain analysis of In(Ga)N/GaN short period superlattices;Journal of Applied Physics;2018-01-14

4. Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate;Japanese Journal of Applied Physics;2015-01-08

5. Experimental Study of the Strain in Different Structures of the InGaN/GaN and InGaN/AlInGaN Quantum Well;Advanced Materials Research;2014-08

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